IRLR8743PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

250 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

640A

Height :

2.3876mm

Threshold Voltage :

1.9V

Mount :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4880pF @ 15V

Power Dissipation :

135W

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Width :

6.22mm

Nominal Vgs :

1.9 V

Fall Time (Typ) :

17 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Number of Elements :

1

FET Type :

N-Channel

Continuous Drain Current (ID) :

160A

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Resistance :

3.1mOhm

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Vgs (Max) :

±20V

Length :

6.7056mm

Factory Lead Time :

26 Weeks

Turn On Delay Time :

19 ns

Element Configuration :

Single

Turn-Off Delay Time :

21 ns

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Power Dissipation-Max :

135W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

35ns

Published :

2007

Gate to Source Voltage (Vgs) :

20V