IRLR8729TRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0089Ohm

Transistor Element Material :

SILICON

Factory Lead Time :

52 Weeks

Drain Current-Max (Abs) (ID) :

50A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

6.22mm

Continuous Drain Current (ID) :

58A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Length :

6.7056mm

Number of Pins :

3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

55W

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

74 mJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

11 ns

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

260A

Rise Time :

47ns

FET Type :

N-Channel

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 25µA

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

55W Tc

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Height :

2.26mm

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

JESD-609 Code :

e3

Number of Terminations :

2

Terminal Form :

Gull wing