IRLR8729TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Factory Lead Time :

52 Weeks

Pulsed Drain Current-Max (IDM) :

260A

Series :

HEXFET®

Continuous Drain Current (ID) :

58A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2004

Vgs (Max) :

±20V

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~175°C TJ

Height :

2.26mm

Fall Time (Typ) :

10 ns

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

55W Tc

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Length :

6.7056mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Rise Time :

47ns

Power Dissipation :

55W

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

50A

Avalanche Energy Rating (Eas) :

74 mJ

Drain-source On Resistance-Max :

0.0089Ohm

Turn-Off Delay Time :

11 ns

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Terminal Form :

Gull wing

Number of Elements :

1

Mounting Type :

Surface Mount