IRLR8729PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

8.9mOhm

ECCN Code :

EAR99

Height :

2.39mm

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

1.8 V

Vgs (Max) :

±20V

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Drain Current-Max (Abs) (ID) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

47ns

Avalanche Energy Rating (Eas) :

74 mJ

Recovery Time :

24 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Series :

HEXFET®

Published :

2008

Power Dissipation :

55W

Lead Free :

Lead Free

Length :

6.73mm

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

58A Tc

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

58A

Element Configuration :

Single

Width :

6.22mm

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

260A

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

11 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

55W Tc

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30