IRLR8726TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

75W Tc

Operating Temperature :

-55°C~175°C TJ

Rise Time :

49ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Published :

2007

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

2.3876mm

Number of Terminations :

2

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.058Ohm

Turn On Delay Time :

12 ns

Fall Time (Typ) :

16 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

86A

Case Connection :

DRAIN

Mount :

Surface Mount

Power Dissipation :

75W

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Transistor Element Material :

SILICON

Width :

6.22mm

Terminal Position :

Single

Number of Elements :

1

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 25A, 10V

Length :

6.7056mm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)