IRLR8726PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

16 ns

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Recovery Time :

36 ns

Threshold Voltage :

1.8V

Mounting Type :

Surface Mount

Termination :

SMD/SMT

FET Type :

N-Channel

Length :

6.7056mm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Packaging :

Tube

Turn-Off Delay Time :

15 ns

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

86A

Element Configuration :

Single

Dual Supply Voltage :

30V

ECCN Code :

EAR99

Nominal Vgs :

1.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5.8mOhm

Height :

2.3876mm

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Published :

2004

Power Dissipation :

75W

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Rise Time :

49ns

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Number of Pins :

3

Turn On Delay Time :

12 ns

Power Dissipation-Max :

75W Tc