IRLR8721TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

Turn On Delay Time :

8.8 ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

6.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

6.22mm

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Resistance :

8.4mOhm

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

260A

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Length :

6.7056mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 25A, 10V

Power Dissipation :

65W

Height :

2.3876mm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Case Connection :

DRAIN

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

65A

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Turn-Off Delay Time :

9.4 ns

Power Dissipation-Max :

65W Tc

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Rise Time :

30ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V