IRLR8503
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- Mfr.Part #
- IRLR8503
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 44A DPAK
- Stock
- 31,208
- In Stock ：
- 31,208
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- HEXFET®
- Power Dissipation-Max :
- 62W Tc
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 15A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Supplier Device Package :
- D-Pak
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Published :
- 2005
- Datasheets
- IRLR8503
N-Channel Tube 16mOhm @ 15A, 10V ±20V 1650pF @ 25V 20nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8503 Description
This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and dv/dt-induced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.
IRLR8503 Features
-
P-Channel Application-Specific MOSFET
-
Ideal for CPU Core DC-DC Converters
-
Low Conduction Losses
-
Minimizes Parallel MOSFETs for high current applications
IRLR8503 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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