IRLR8259PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 21A, 10V

Series :

HEXFET®

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 13V

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

1.9V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Terminations :

2

Turn-Off Delay Time :

9.1 ns

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Terminal Position :

Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

67 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Rise Time :

38ns

Mount :

Surface Mount

Height :

2.3876mm

Mounting Type :

Surface Mount

Dual Supply Voltage :

25V

JEDEC-95 Code :

TO-252AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Resistance :

8.7mOhm

Power Dissipation :

48W

Packaging :

Tube

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

1.9 V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

25V

Continuous Drain Current (ID) :

57A

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Termination :

SMD/SMT

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Published :

2008

Recovery Time :

26 ns

Length :

6.7056mm

JESD-609 Code :

e3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

48W Tc

Drain Current-Max (Abs) (ID) :

42A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

8.4 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

8.9 ns

Case Connection :

DRAIN

Width :

6.22mm