IRLR8259PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

25V

Nominal Vgs :

1.9 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2.35V @ 25µA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

FET Type :

N-Channel

Series :

HEXFET®

Turn On Delay Time :

8.4 ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Recovery Time :

26 ns

Length :

6.7056mm

Fall Time (Typ) :

8.9 ns

Dual Supply Voltage :

25V

Resistance :

8.7mOhm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

67 mJ

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Height :

2.3876mm

Case Connection :

DRAIN

Radiation Hardening :

No

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

42A

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 13V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

48W

Continuous Drain Current (ID) :

57A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 21A, 10V

Threshold Voltage :

1.9V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

57A Tc

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Number of Elements :

1

Rise Time :

38ns

Packaging :

Tube

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Turn-Off Delay Time :

9.1 ns

Power Dissipation-Max :

48W Tc

Termination :

SMD/SMT

Mount :

Surface Mount

Width :

6.22mm