IRLR8256TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

12 ns

Published :

2007

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Series :

HEXFET®

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.35V @ 25µA

JESD-609 Code :

e3

Rise Time :

46ns

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 25A, 10V

Mount :

Surface Mount

Width :

6.22mm

Terminal Form :

Gull wing

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

9.7 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0057Ohm

Length :

6.7056mm

Drain to Source Breakdown Voltage :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 13V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

63W

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Continuous Drain Current (ID) :

81A

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

8.5 ns

Height :

2.3876mm

Avalanche Energy Rating (Eas) :

86 mJ

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

63W Tc