IRLR8256TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

63W Tc

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

81A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Vgs (Max) :

±20V

Turn On Delay Time :

9.7 ns

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 13V

Turn-Off Delay Time :

12 ns

Avalanche Energy Rating (Eas) :

86 mJ

Rise Time :

46ns

Drain to Source Breakdown Voltage :

25V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0057Ohm

Fall Time (Typ) :

8.5 ns

Published :

2007

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.3876mm

Factory Lead Time :

12 Weeks

Length :

6.7056mm

Power Dissipation :

63W

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Terminal Position :

Single

Number of Elements :

1

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Width :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V