IRLR8256PBF
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- Mfr.Part #
- IRLR8256PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 81A DPAK
- Stock
- 64,771
- In Stock ：
- 64,771
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 25A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Threshold Voltage :
- 1.8V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 81A Tc
- Number of Pins :
- 3
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1470pF @ 13V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2008
- Contact Plating :
- Tin
- Nominal Vgs :
- 1.8 V
- Transistor Element Material :
- SILICON
- Width :
- 6.22mm
- Power Dissipation-Max :
- 63W Tc
- Drain to Source Breakdown Voltage :
- 25V
- Length :
- 6.73mm
- Termination :
- SMD/SMT
- Height :
- 2.39mm
- Resistance :
- 5.7mOhm
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 8.5 ns
- Power Dissipation :
- 63W
- Rise Time :
- 46ns
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 9.7 ns
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Recovery Time :
- 29 ns
- Continuous Drain Current (ID) :
- 81A
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-252AA
- Dual Supply Voltage :
- 25V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 86 mJ
- Turn-Off Delay Time :
- 12 ns
- Datasheets
- IRLR8256PBF
N-Channel Tube 5.7m Ω @ 25A, 10V ±20V 1470pF @ 13V 15nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8256PBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 86 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1470pF @ 13V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 81A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.8V, which means that it will not activate any of its functions when its threshold voltage reaches 1.8V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLR8256PBF Features
the avalanche energy rating (Eas) is 86 mJ
a continuous drain current (ID) of 81A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 12 ns
a threshold voltage of 1.8V
IRLR8256PBF Applications
There are a lot of Infineon Technologies
IRLR8256PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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