IRLR8113TRPBF
- Mfr.Part #
- IRLR8113TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 94A DPAK
- Stock
- 22,098
- In Stock :
- 22,098
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Length :
- 6.7056mm
- Turn-Off Delay Time :
- 15 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2920pF @ 15V
- Supplier Device Package :
- D-Pak
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 10V
- Rise Time :
- 3.8ns
- Fall Time (Typ) :
- 10 ns
- Resistance :
- 6mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 94A Tc
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 4.5V
- Continuous Drain Current (ID) :
- 94A
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 2.92nF
- Rds On Max :
- 6 mΩ
- Height :
- 2.3876mm
- Power Dissipation :
- 89W
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Max Operating Temperature :
- 175°C
- Current Rating :
- 94A
- Width :
- 6.22mm
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Published :
- 2004
- Power Dissipation-Max :
- 89W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Nominal Vgs :
- 2.25 V
- Drain to Source Resistance :
- 7.4mOhm
- Turn On Delay Time :
- 9.2 ns
- Element Configuration :
- Single
- Datasheets
- IRLR8113TRPBF

N-Channel Tape & Reel (TR) 6mOhm @ 15A, 10V ±20V 2920pF @ 15V 32nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8113TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2920pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 94A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 7.4mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLR8113TRPBF Features
a continuous drain current (ID) of 94A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 7.4mOhm
a 30V drain to source voltage (Vdss)
IRLR8113TRPBF Applications
There are a lot of Infineon Technologies
IRLR8113TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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