IRLR8113PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

2.92nF

Threshold Voltage :

2.25V

Power Dissipation :

89W

Series :

HEXFET®

Turn On Delay Time :

9.2 ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Length :

6.7056mm

Recovery Time :

49 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package :

D-Pak

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

94A

Height :

2.3876mm

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2920pF @ 15V

Rise Time :

3.8ns

Vgs(th) (Max) @ Id :

2.25V @ 250μA

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

6mOhm @ 15A, 10V

Vgs (Max) :

±20V

Lead Free :

Lead Free

Width :

6.22mm

Published :

2004

Radiation Hardening :

No

Resistance :

6mOhm

Power Dissipation-Max :

89W Tc

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

94A Tc

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Max Operating Temperature :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Number of Pins :

3

Drain to Source Resistance :

7.4mOhm

Packaging :

Tube

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Current Rating :

94A

Rds On Max :

6 mΩ