IRLR8103VTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Turn-Off Delay Time :

24 ns

Mounting Type :

Surface Mount

Width :

6.22mm

Drain to Source Resistance :

10.5mOhm

Current - Continuous Drain (Id) @ 25°C :

91A Tc

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Supplier Device Package :

D-Pak

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Surface Mount

Power Dissipation-Max :

115W Tc

Rds On Max :

9 mΩ

FET Type :

N-Channel

Rise Time :

9ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

2.3876mm

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

Input Capacitance :

2.672nF

Length :

6.7056mm

Published :

2004

Number of Elements :

1

Power Dissipation :

89W

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

91A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Operating Temperature :

150°C

Fall Time (Typ) :

18 ns

Rds On (Max) @ Id, Vgs :

9mOhm @ 15A, 10V

Turn On Delay Time :

10 ns

Number of Pins :

3