IRLR8103VPBF
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- Mfr.Part #
- IRLR8103VPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 91A DPAK
- Stock
- 5,957
- In Stock ：
- 5,957
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.7056mm
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 3 V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 115W Tc
- Threshold Voltage :
- 3V
- Turn-Off Delay Time :
- 24 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2672pF @ 16V
- Series :
- HEXFET®
- Width :
- 6.22mm
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Current Rating :
- 89A
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Published :
- 2004
- Fall Time (Typ) :
- 18 ns
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Dual Supply Voltage :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 91A
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 15A, 10V
- Rise Time :
- 9ns
- FET Type :
- N-Channel
- Resistance :
- 9mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 91A Tc
- REACH SVHC :
- No SVHC
- Lead Free :
- Contains Lead, Lead Free
- ECCN Code :
- EAR99
- Power Dissipation :
- 89W
- Height :
- 2.3876mm
- Turn On Delay Time :
- 10 ns
- Datasheets
- IRLR8103VPBF
N-Channel Tube 9m Ω @ 15A, 10V ±20V 2672pF @ 16V 27nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8103VPBF Overview
A device's maximal input capacitance is 2672pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 91A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRLR8103VPBF Features
a continuous drain current (ID) of 91A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
a threshold voltage of 3V
IRLR8103VPBF Applications
There are a lot of Infineon Technologies
IRLR8103VPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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