IRLR8103

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

89A Ta

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

350A

Qualification Status :

Not Qualified

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.0085Ohm

Series :

HEXFET®

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

89W Ta

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

89A

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier