IRLR7843TRPBF
- Mfr.Part #
- IRLR7843TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 161A DPAK
- Stock
- 69,960
- In Stock :
- 69,960
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 161A
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Threshold Voltage :
- 2.3V
- Radiation Hardening :
- No
- Height :
- 2.2606mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4380pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- 161A
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Rise Time :
- 42ns
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 140W Tc
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 19 ns
- Published :
- 2008
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Nominal Vgs :
- 2.3 V
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Width :
- 6.22mm
- Operating Mode :
- ENHANCEMENT MODE
- Recovery Time :
- 59 ns
- Length :
- 6.7056mm
- Turn On Delay Time :
- 25 ns
- Power Dissipation :
- 140W
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 15A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pulsed Drain Current-Max (IDM) :
- 620A
- Drain to Source Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 161A Tc
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Resistance :
- 3.3MOhm
- Turn-Off Delay Time :
- 34 ns
- Datasheets
- IRLR7843TRPBF

N-Channel Tape & Reel (TR) 3.3m Ω @ 15A, 10V ±20V 4380pF @ 15V 50nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7843TRPBF Description
These MDmeshTM K3 Power MOSFETs are the result of upgrading the MDmeshTM technology from STMicroelectronics and creating a new, enhanced vertical structure. These devices are perfect for the most demanding applications thanks to their low on-resistance, high dynamic performance, and strong avalanche capability. This product can be applied in a variety of circumstances and is meant for general use.
IRLR7843TRPBF Features
-
4.5V VGS, Very Low RDS(on),
-
low gate impedance extremely
-
Voltage and Current Characterized Avalanche in Fulll
IRLR7843TRPBF Applications
-
Buck High-Frequency Synchronous
-
Computer processor power converters
-
Isolated High Frequency DC-DC
-
Converters for Industrial and Telecom Use with Synchronous Rectification
-
Lead-Free
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