IRLR7833TRRPBF
- Mfr.Part #
- IRLR7833TRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 140A DPAK
- Stock
- 23,439
- In Stock :
- 23,439
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 30V
- Published :
- 2004
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 4010pF @ 15V
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.7056mm
- Rise Time :
- 6.9ns
- Input Capacitance :
- 4.01nF
- Lead Free :
- Lead Free
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 4.5mOhm
- Nominal Vgs :
- 2.3 V
- Turn On Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 23 ns
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- D-Pak
- Continuous Drain Current (ID) :
- 140A
- Current Rating :
- 99A
- Element Configuration :
- Single
- Rds On Max :
- 4.5 mΩ
- Height :
- 2.3876mm
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Power Dissipation :
- 140W
- Width :
- 6.22mm
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 4.5mOhm @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 140W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 15 ns
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Datasheets
- IRLR7833TRRPBF

N-Channel Tape & Reel (TR) 4.5mOhm @ 15A, 10V ±20V 4010pF @ 15V 50nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7833TRRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4010pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 4.5mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRLR7833TRRPBF Features
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 4.5mOhm
a 30V drain to source voltage (Vdss)
IRLR7833TRRPBF Applications
There are a lot of Infineon Technologies
IRLR7833TRRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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