IRLR7821TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Width :

6.22mm

Radiation Hardening :

No

FET Type :

N-Channel

Max Operating Temperature :

175°C

Number of Elements :

1

Continuous Drain Current (ID) :

65A

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

10 ns

Height :

2.3876mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

10MOhm

Rise Time :

4.3ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

Length :

6.7056mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Rds On Max :

10 MΩ

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

3.2 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

10mOhm @ 15A, 10V

Series :

HEXFET®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package :

D-Pak

Power Dissipation :

75W

Published :

2006

Turn On Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Power Dissipation-Max :

75W Tc

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Input Capacitance :

1.03nF