IRLR7821TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.01Ohm

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

230 mJ

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

65A

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 15A, 10V

Power Dissipation-Max :

75W Tc

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Pulsed Drain Current-Max (IDM) :

260A

Number of Terminations :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

JEDEC-95 Code :

TO-251AA

Terminal Form :

THROUGH-HOLE