IRLR7821TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

260A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Mounting Type :

Surface Mount

Series :

HEXFET®

JEDEC-95 Code :

TO-251AA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Published :

2004

Case Connection :

DRAIN

Power Dissipation-Max :

75W Tc

Number of Terminations :

3

Qualification Status :

Not Qualified

FET Type :

N-Channel

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10m Ω @ 15A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

65A

Drain-source On Resistance-Max :

0.01Ohm

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA