IRLR7807ZPBF
- Mfr.Part #
- IRLR7807ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 43A DPAK
- Stock
- 40,076
- In Stock :
- 40,076
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Power Dissipation-Max :
- 40W Tc
- FET Type :
- N-Channel
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 15V
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Published :
- 2003
- Rds On (Max) @ Id, Vgs :
- 13.8m Ω @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Datasheets
- IRLR7807ZPBF

N-Channel Tube 13.8m Ω @ 15A, 10V ±20V 780pF @ 15V 11nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7807ZPBF Description
IRLR7807ZPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the IRLR7807ZPBF is -55°C~175°C TJ and its maximum power dissipation is 40W Tc. IRLR7807ZPBF has 2 pins and it is available in Tube packaging way.
IRLR7807ZPBF Features
-
Very Low RDS(on) at 4.5V VGS
-
Ultra-Low Gate Impedance
-
Fully Characterized Avalanche Voltage and Current
IRLR7807ZPBF Applications
-
High Frequency Synchronous Buck
-
Converters for Computer Processor Power
-
Lead-Free
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