IRLR4343PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Supplier Device Package :

D-Pak

Power Dissipation :

79W

Drain to Source Resistance :

65mOhm

Min Operating Temperature :

-40°C

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

5.3 ns

Power Dissipation-Max :

79W Tc

FET Type :

N-Channel

Max Operating Temperature :

175°C

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 50V

Continuous Drain Current (ID) :

26A

Length :

6.7056mm

Turn On Delay Time :

5.7 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

50mOhm @ 4.7A, 10V

Published :

2004

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Packaging :

Tube

Mounting Type :

Surface Mount

Rds On Max :

50 mΩ

Height :

2.2606mm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Number of Pins :

3

Current Rating :

26A

Input Capacitance :

740pF

Series :

HEXFET®

Voltage - Rated DC :

55V

Operating Temperature :

-40°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

19ns

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V