IRLR3915PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Pulsed Drain Current-Max (IDM) :

240A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

120W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±16V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

200 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

30A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

2

Drain-source On Resistance-Max :

0.014Ohm

Published :

2002

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Series :

HEXFET®

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 25V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA