IRLR3717TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Published :

2004

Drain to Source Breakdown Voltage :

20V

Number of Pins :

3

Power Dissipation-Max :

89W Tc

Input Capacitance :

2.83nF

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Supplier Device Package :

D-Pak

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

20V

Rise Time :

14ns

Fall Time (Typ) :

16 ns

Drain to Source Resistance :

4mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 10V

Rds On (Max) @ Id, Vgs :

4mOhm @ 15A, 10V

Continuous Drain Current (ID) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Rds On Max :

4 mΩ

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Max Operating Temperature :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Power Dissipation :

89W

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

2.45V @ 250μA