IRLR3717PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

15 Weeks

Terminal Form :

Gull wing

Turn-Off Delay Time :

5.8 ns

Rds On (Max) @ Id, Vgs :

4m Ω @ 15A, 10V

Drain to Source Breakdown Voltage :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

460 mJ

Radiation Hardening :

No

Continuous Drain Current (ID) :

120A

Recovery Time :

33 ns

Power Dissipation :

89W

Case Connection :

DRAIN

Series :

HEXFET®

FET Type :

N-Channel

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Length :

6.7056mm

Number of Pins :

3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

460A

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 10V

Number of Terminations :

2

Resistance :

4mOhm

Published :

2004

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mount :

Surface Mount

Turn On Delay Time :

14 ns

Transistor Application :

SWITCHING

Rise Time :

14ns

Lead Free :

Lead Free

Fall Time (Typ) :

16 ns

Power Dissipation-Max :

89W Tc

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Width :

6.22mm

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Current Rating :

120A

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

ECCN Code :

EAR99

Voltage - Rated DC :

20V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Height :

2.26mm

RoHS Status :

ROHS3 Compliant