IRLR3715ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.7056mm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Continuous Drain Current (ID) :

49A

Current Rating :

49A

Voltage - Rated DC :

20V

Mount :

Surface Mount

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance :

810pF

Number of Elements :

1

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

13ns

Drain to Source Breakdown Voltage :

20V

Rds On Max :

11 mΩ

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Supplier Device Package :

D-Pak

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

11mOhm @ 15A, 10V

Width :

6.22mm

Turn On Delay Time :

7.8 ns

Fall Time (Typ) :

4.3 ns

Power Dissipation :

40W

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Height :

2.26mm

Element Configuration :

Single

Turn-Off Delay Time :

10 ns

Radiation Hardening :

No

Drain to Source Resistance :

11mOhm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Power Dissipation-Max :

40W Tc

Operating Temperature :

-55°C~175°C TJ

Published :

2004

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

20V