IRLR3715ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Power Dissipation :

40W

Vgs (Max) :

±20V

Recovery Time :

17 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

REACH SVHC :

No SVHC

Rise Time :

13ns

Length :

6.7056mm

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

20V

Current Rating :

49A

Element Configuration :

Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 10V

Height :

2.26mm

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

200A

Fall Time (Typ) :

4.3 ns

Turn On Delay Time :

7.8 ns

Power Dissipation-Max :

40W Tc

FET Type :

N-Channel

Continuous Drain Current (ID) :

49A

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Resistance :

11mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Threshold Voltage :

2.1V

Number of Pins :

3

Radiation Hardening :

No

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 10V

Number of Terminations :

2

Packaging :

Tube

Turn-Off Delay Time :

10 ns

Published :

2004

Drain to Source Breakdown Voltage :

20V