IRLR3715Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.011Ohm

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 10V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

49A Tc

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

19 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

HEXFET®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Published :

2003

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

30A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

40W Tc

Terminal Position :

Single

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Number of Elements :

1