IRLR3715

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Terminal Form :

Gull wing

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

14m Ω @ 26A, 10V

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

19 mJ

Power Dissipation-Max :

3.8W Ta 71W Tc

Vgs (Max) :

±20V

Published :

2001

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

200A

Terminal Position :

Single

Qualification Status :

Not Qualified

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.011Ohm

Series :

HEXFET®

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 10V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

30A