IRLR3714TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

47W

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Supplier Device Package :

D-Pak

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance :

670pF

Published :

2005

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Drain to Source Resistance :

20mOhm

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Continuous Drain Current (ID) :

36A

Turn-Off Delay Time :

10 ns

Max Operating Temperature :

175°C

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

47W Tc

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

20mOhm @ 18A, 10V

Rise Time :

78ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 10V

Series :

HEXFET®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On Max :

20 mΩ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Element Configuration :

Single

Min Operating Temperature :

-55°C

Fall Time (Typ) :

4.5 ns

Drain to Source Voltage (Vdss) :

20V