IRLR3714TRLPBF
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- Mfr.Part #
- IRLR3714TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 36A DPAK
- Stock
- 7,067
- In Stock ：
- 7,067
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 36A
- Power Dissipation :
- 47W
- Mounting Type :
- Surface Mount
- Rise Time :
- 78ns
- Series :
- HEXFET®
- Published :
- 2005
- Drain to Source Voltage (Vdss) :
- 20V
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 47W Tc
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 18A, 10V
- Fall Time (Typ) :
- 4.5 ns
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 10 ns
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- D-Pak
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 36A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 10V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Max Operating Temperature :
- 175°C
- Input Capacitance :
- 670pF
- Element Configuration :
- Single
- Drain to Source Resistance :
- 20mOhm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On Max :
- 20 mΩ
- Voltage - Rated DC :
- 20V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 9.7nC @ 4.5V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 20V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Datasheets
- IRLR3714TRLPBF
N-Channel Tape & Reel (TR) 20mOhm @ 18A, 10V ±20V 670pF @ 10V 9.7nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3714TRLPBF Overview
A device's maximal input capacitance is 670pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 36A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 20mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRLR3714TRLPBF Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 20mOhm
a 20V drain to source voltage (Vdss)
IRLR3714TRLPBF Applications
There are a lot of Infineon Technologies
IRLR3714TRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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