IRLR3714

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20m Ω @ 18A, 10V

Drain-source On Resistance-Max :

0.02Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

72 mJ

Terminal Finish :

TIN LEAD

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

ECCN Code :

EAR99

Power Dissipation-Max :

47W Tc

Drain to Source Voltage (Vdss) :

20V

Surface Mount :

yes

JESD-609 Code :

e0

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

245

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

36A Tc

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

36A

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

140A

Published :

2001

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

DS Breakdown Voltage-Min :

20V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA