IRLR3705ZTRPBF
- Mfr.Part #
- IRLR3705ZTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 42A DPAK
- Stock
- 5,115
- In Stock :
- 5,115
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 42A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Terminal Form :
- Gull wing
- Power Dissipation :
- 130W
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Resistance :
- 8mOhm
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- JEDEC-95 Code :
- TO-252AA
- Lead Free :
- Contains Lead, Lead Free
- Power Dissipation-Max :
- 130W Tc
- Voltage - Rated DC :
- 55V
- Turn On Delay Time :
- 17 ns
- Recovery Time :
- 42 ns
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 42A
- Length :
- 6.7056mm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 55V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 89A
- Case Connection :
- DRAIN
- Nominal Vgs :
- 3 V
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 70 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 5V
- Rise Time :
- 150ns
- Mount :
- Surface Mount
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Threshold Voltage :
- 3V
- Termination :
- SMD/SMT
- Height :
- 2.2606mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 33 ns
- Vgs (Max) :
- ±16V
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Series :
- HEXFET®
- Dual Supply Voltage :
- 55V
- Gate to Source Voltage (Vgs) :
- 16V
- Datasheets
- IRLR3705ZTRPBF

N-Channel Tape & Reel (TR) 8m Ω @ 42A, 10V ±16V 2900pF @ 25V 66nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3705ZTRPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRLR3705ZTRPBF Features
-
Logic Level
-
Advanced Process Technology
-
Ultra Low On-Resistance
-
175°C Operating Temperature
-
Fast Switching
-
Repetitive Avalanche Allowed up to Tjmax
IRLR3705ZTRPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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