IRLR3636TRPBF
- Mfr.Part #
- IRLR3636TRPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IRLR3636 - 12V-300V N-CHANNEL PO
- Stock
- 55,605
- In Stock :
- 55,605
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 4.5V
- Mount :
- Surface Mount
- Published :
- 2009
- Continuous Drain Current (ID) :
- 99A
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 3779pF @ 50V
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-252AA
- Current :
- 50A
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 45 ns
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±16V
- Power Dissipation-Max :
- 143W Tc
- Series :
- HEXFET®
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 43 ns
- Max Junction Temperature (Tj) :
- 175°C
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 60V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 69 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Length :
- 6.7056mm
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 143W
- Radiation Hardening :
- No
- Threshold Voltage :
- 2.5V
- Case Connection :
- DRAIN
- Rise Time :
- 216ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Height :
- 2.52mm
- Gate to Source Voltage (Vgs) :
- 16V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRLR3636TRPBF

N-Channel Tape & Reel (TR) 6.8m Ω @ 50A, 10V ±16V 3779pF @ 50V 49nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3636TRPBF Description
IRLR3636TRPBF is a 60V Single N-Channel Power MOSFET. The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The Infineon IRLR3636TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRLR3636TRPBF is in the TO-252-3 package with 143W power dissipation.
IRLR3636TRPBF Features
-
Optimized for Logic Level Drive
-
Very Low RDS(ON) at 4.5V VGS
-
Superior R*Q at 4.5V VGS
-
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
-
Fully Characterized Capacitance and Avalanche SOA
-
Enhanced body diode dV/dt and dI/dt Capability
-
Lead-Free
IRLR3636TRPBF Applications
-
DC Motor Drive
-
High-Efficiency Synchronous Rectification in SMPS
-
Uninterruptible Power Supply
-
High-Speed Power Switching
-
Hard Switched and High-Frequency Circuits
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