IRLR3636TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.7056mm

Element Configuration :

Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

Transistor Element Material :

SILICON

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs (Max) :

±16V

Radiation Hardening :

No

Width :

6.22mm

Number of Channels :

1

Continuous Drain Current (ID) :

99A

Height :

2.52mm

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

45 ns

REACH SVHC :

No SVHC

Number of Pins :

3

Series :

HEXFET®

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Fall Time (Typ) :

69 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

175°C

Power Dissipation :

143W

Gate to Source Voltage (Vgs) :

16V

Published :

2009

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

43 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rise Time :

216ns

Case Connection :

DRAIN

Current :

50A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

143W Tc

Number of Elements :

1

Threshold Voltage :

2.5V

Voltage :

60V