IRLR3636TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

170 mJ

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Power Dissipation-Max :

143W Tc

Power Dissipation :

143W

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Rise Time :

216ns

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

396A

Mount :

Surface Mount

Published :

2009

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±16V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Drain-source On Resistance-Max :

0.0083Ohm

Case Connection :

DRAIN

Fall Time (Typ) :

69 ns

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Transistor Application :

SWITCHING

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

50A

Mounting Type :

Surface Mount

FET Type :

N-Channel

JESD-609 Code :

e3

Number of Elements :

1