IRLR3636PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

143W

Element Configuration :

Single

Fall Time (Typ) :

96 ns

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

99A

Length :

6.73mm

Rise Time :

216ns

Turn On Delay Time :

45 ns

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

16V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 100μA

FET Type :

N-Channel

Power Dissipation-Max :

143W Tc

Radiation Hardening :

No

ECCN Code :

EAR99

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Width :

6.22mm

Resistance :

6.8mOhm

Threshold Voltage :

2.5V

REACH SVHC :

No SVHC

Height :

2.39mm

Number of Elements :

1

Turn-Off Delay Time :

43 ns

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Mounting Type :

Surface Mount