IRLR3410TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

17A

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Terminal Position :

Single

Power Dissipation-Max :

79W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

150 mJ

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Terminal Finish :

MATTE TIN OVER NICKEL

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

60A

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

FET Type :

N-Channel

Published :

1998

Drain-source On Resistance-Max :

0.125Ohm

Case Connection :

DRAIN

Vgs (Max) :

±16V

Number of Terminations :

2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY