IRLR3410TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

17A

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Threshold Voltage :

2V

Radiation Hardening :

No

Lead Free :

Contains Lead, Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.7056mm

Element Configuration :

Single

Contact Plating :

Tin

Number of Channels :

1

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Resistance :

105mOhm

Power Dissipation :

79W

Current Rating :

17A

Turn-Off Delay Time :

30 ns

Rise Time :

53ns

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

REACH SVHC :

No SVHC

FET Type :

N-Channel

Width :

6.22mm

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

79W Tc

Factory Lead Time :

12 Weeks

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

7.2 ns

Height :

2.52mm

Max Junction Temperature (Tj) :

175°C

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Number of Terminations :

2

Nominal Vgs :

2 V

Fall Time (Typ) :

26 ns

Pulsed Drain Current-Max (IDM) :

60A

Recovery Time :

210 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

17A Tc

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

16V

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Published :

2003

Series :

HEXFET®