IRLR3410TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

79W Tc

Published :

1998

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Drain-source On Resistance-Max :

0.125Ohm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±16V

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

150 mJ

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Elements :

1

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

100V

Series :

HEXFET®

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

17A Tc

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

17A

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON