IRLR3410TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

150 mJ

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.125Ohm

JEDEC-95 Code :

TO-252AA

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

17A

Published :

1998

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Current Rating :

15A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

79W Tc

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Vgs (Max) :

±16V

Series :

HEXFET®

Number of Elements :

1

Lead Free :

Contains Lead

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

53ns

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

60A

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel