IRLR3410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

150 mJ

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

79W Tc

Drain-source On Resistance-Max :

0.125Ohm

Drain Current-Max (Abs) (ID) :

17A

Terminal Form :

Gull wing

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Terminations :

2

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

ECCN Code :

EAR99

JESD-609 Code :

e3

Surface Mount :

yes

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

60A

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Published :

1998

Number of Elements :

1

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant