IRLR3303TRPBF
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- Mfr.Part #
- IRLR3303TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 35A DPAK
- Stock
- 15,356
- In Stock ：
- 15,356
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Number of Elements :
- 1
- Rise Time :
- 200ns
- Fall Time (Typ) :
- 36 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 45mOhm
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±16V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Rds On Max :
- 31 mΩ
- Supplier Device Package :
- D-Pak
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 31mOhm @ 21A, 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 68W Tc
- Continuous Drain Current (ID) :
- 35A
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2004
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Current Rating :
- 35A
- Power Dissipation :
- 57W
- Input Capacitance :
- 870pF
- Turn-Off Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Turn On Delay Time :
- 7.4 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 30V
- Element Configuration :
- Single
- Max Operating Temperature :
- 175°C
- Gate to Source Voltage (Vgs) :
- 16V
- Datasheets
- IRLR3303TRPBF
N-Channel Tape & Reel (TR) 31mOhm @ 21A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3303TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 870pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14 ns.This device has a drain-to-source resistance of 45mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLR3303TRPBF Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)
IRLR3303TRPBF Applications
There are a lot of Infineon Technologies
IRLR3303TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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