IRLR3303PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Rds On Max :

31 mΩ

Turn-Off Delay Time :

14 ns

Max Operating Temperature :

175°C

Rise Time :

200ns

Input Capacitance :

870pF

Supplier Device Package :

D-Pak

Current Rating :

35A

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain to Source Resistance :

45mOhm

Continuous Drain Current (ID) :

35A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

31mOhm @ 21A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

36 ns

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Recovery Time :

110 ns

Resistance :

31mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Power Dissipation :

57W

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Series :

HEXFET®

Voltage - Rated DC :

30V

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

RoHS Status :

RoHS Compliant

Number of Pins :

3

Dual Supply Voltage :

30V

Gate to Source Voltage (Vgs) :

16V

Drain to Source Voltage (Vdss) :

30V

REACH SVHC :

No SVHC

Power Dissipation-Max :

68W Tc

Nominal Vgs :

1 V

Number of Elements :

1

Mount :

Surface Mount