IRLR3110ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Turn-Off Delay Time :

33 ns

Height :

2.52mm

JESD-609 Code :

e3

Fall Time (Typ) :

48 ns

Max Junction Temperature (Tj) :

175°C

Number of Terminations :

2

Transistor Element Material :

SILICON

Lead Free :

Lead Free

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Continuous Drain Current (ID) :

42A

Case Connection :

DRAIN

Terminal Form :

Gull wing

Resistance :

14mOhm

Pulsed Drain Current-Max (IDM) :

250A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Drain to Source Breakdown Voltage :

100V

Length :

6.7056mm

Rise Time :

110ns

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 25V

Power Dissipation-Max :

140W Tc

Mount :

Surface Mount

Radiation Hardening :

No

Series :

HEXFET®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

140W

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Factory Lead Time :

12 Weeks

Number of Pins :

3

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Terminal Position :

Single

Turn On Delay Time :

24 ns

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

14m Ω @ 38A, 10V

Operating Temperature :

-55°C~175°C TJ