IRLR3110ZTRPBF
- Mfr.Part #
- IRLR3110ZTRPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IRLR3110 - 12V-300V N-CHANNEL PO
- Stock
- 9,699
- In Stock :
- 9,699
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 140W Tc
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Channels :
- 1
- Resistance :
- 14mOhm
- Width :
- 6.22mm
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Junction Temperature (Tj) :
- 175°C
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Height :
- 2.52mm
- Turn On Delay Time :
- 24 ns
- Length :
- 6.7056mm
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 38A, 10V
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 42A
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 140W
- Turn-Off Delay Time :
- 33 ns
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 250A
- Published :
- 2009
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-252AA
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Input Capacitance (Ciss) (Max) @ Vds :
- 3980pF @ 25V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 48 ns
- Drain to Source Breakdown Voltage :
- 100V
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 110ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Series :
- HEXFET®
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Datasheets
- IRLR3110ZTRPBF

N-Channel Tape & Reel (TR) 14m Ω @ 38A, 10V ±16V 3980pF @ 25V 48nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3110ZTRPBF Description
Specifically designed for Industrial applications,
this HEXFET? Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.
IRLR3110ZTRPBF Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
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