IRLR3110ZPBF
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- Mfr.Part #
- IRLR3110ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 42A DPAK
- Stock
- 9,690
- In Stock ：
- 9,690
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 4.5V
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 16V
- Turn-Off Delay Time :
- 33 ns
- Resistance :
- 14mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 48 ns
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Threshold Voltage :
- 2.5V
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±16V
- Power Dissipation :
- 140mW
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3980pF @ 25V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Width :
- 6.22mm
- Published :
- 2006
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Recovery Time :
- 51 ns
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 140W Tc
- Length :
- 6.7056mm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Nominal Vgs :
- 2.5 V
- Dual Supply Voltage :
- 100V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Turn On Delay Time :
- 24 ns
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 38A, 10V
- Rise Time :
- 110ns
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 42A
- RoHS Status :
- ROHS3 Compliant
- Height :
- 2.3876mm
- Series :
- HEXFET®
- Datasheets
- IRLR3110ZPBF
N-Channel Tube 14m Ω @ 38A, 10V ±16V 3980pF @ 25V 48nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3110ZPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3980pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 42A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 24 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRLR3110ZPBF Features
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 33 ns
a threshold voltage of 2.5V
IRLR3110ZPBF Applications
There are a lot of Infineon Technologies
IRLR3110ZPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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